? 2017 ixys corporation, all rights reserved 1500v mos gated thyristor v dm = 1500v symbol test conditions maximum ratings v dm t j = 25c to 150c 1500 v v gk continuous 30 v v gk transient 40 v i tsm t c = 25c, 1 s 15.5 ka t c = 25c, 10 s 6.4 ka p d t c = 25c 320 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062 in.) from case for 10s 260 c v isol 50/60hz, 1 minute 2500 v~ f c mounting force 50..200/11..45 n/lb weight 5 g ds100594c(12/17) features ? silicon chip on direct-copper bond (dcb) substrate ? isolated mounting surface ? 2500v~ electrical isolation ? very high current capability advantages ? high power density ? low gate drive requirement applications ? capacitive discharge circuits ? ignition circuits ? solid state surge protection (electrically isolated tab) MMJX1H40N150 k a g g = gate k = cathode a = anode ks = cathode sense g k a k a g isolated tab symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. v br i a = 250 ? a, v gk = 0v 1500 v v gk(th) i a = 250 a, v ak = v gk 2.5 5.0 v v t i t = 1000a, v gk = 15v 4.75 6.0 v r t i t > i l , v gk = 15v 1.20 m ? v bo v gk = 15v 5.25 v i d v ak = 1500v, v gk = 0v 15 ? a t j = 125 ? c 1.5 ma i l 250 a i h 200 a i gks v ak = 0v, v gk = ? 30v ?????????????? 200 na ks ks ks
ixys reserves the right to change limits, test conditions, and dimensions. MMJX1H40N150 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. c ik s 2825 pf c oks v ak = 25v, v gk = 0v, f = 1mhz 164 pf c rks 50 pf q g(on) 99 nc q gk i c = 40a, v gk = 15v, v ak = 600v 22 nc q ga 36 nc t ri 100 ns t d 50 ns t ri 100 ns t d 50 ns r thjc 0.39 c/w r thcs 0.12 c/w r thja 30 c/w capacitive discharge, t j = 25c i a = 2000a, v gk = 15v, r g = 1 ? v ak = 1000v, l < 20nh, notes 2 & 3 notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. it is recommended to use a gate driver capable of supplying more than 4amps and >15v gate voltage. 3. refer to fig. 8 & 9. capacitive discharge, t j = 125c i a = 2000a, v gk = 15v, r g = 1 ? v ak = 1000v, l < 20nh, notes 2 & 3
? 2017 ixys corporation, all rights reserved MMJX1H40N150 fig. 1. extended output characteristics @ t j = 25 o c 0 200 400 600 800 1000 1200 0123456789 v ak - volts i a - amperes 10 v 9v 8v v gk = 20v 17v 15v 13v 12v 11v fig. 4. gate charge 0 2 4 6 8 10 12 14 16 0 102030405060708090100 q g - nanocoulombs v gk - volts v ak = 600v i a = 40a i g = 10ma fig. 5. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ak - volts capacitance - picofarad s f = 1 mh z c iks c oks c rks fig. 6. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - k / w fig. 2. extended output characteristics @ t j = 125 o c 0 200 400 600 800 1000 1200 0123456789 v ak - volts i a - amperes v gk = 20v 17v 15v 13v 11v 10v 9v 8v 6v fig. 3. extended output characteristics @ t j = - 40 o c 0 200 400 600 800 1000 1200 0123456789 v ak - volts i a - amperes v gk = 20v 18v 16v 15v 14v 13v 12v 11v 9v 7v
ixys reserves the right to change limits, test conditions, and dimensions. MMJX1H40N150 ixys ref: mmjx1_40n150(7a) 02-19-14 fig. 8. capacitive discharge fig. 9. capacitive discharge waveform fig. 7. cauer thermal network i ri ( ? ) ci (f) 1 0.014083 0.0078555 2 0.068078 0.0196550 3 0.133430 0.1199600 4 0.121939 2.5000000
? 2017 ixys corporation, all rights reserved k = cathode a = anode MMJX1H40N150 pins: 1 - gate 3 - ks = cathode sense 4 - 8 - k = cathode 9 - 16 - a = anode
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